An enhancement-mode GaAs heterojunction transistor using benzocyclobutene as gate dielectric

Journal of Applied Physics

Volumn 100, Issue 1, 2006, Pages

  Jones, G M ^a   Hu, B H ^a   Yang, C H ^a   Yang, M J ^b   Reno, J L ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENZOCYCLOBUTENE; GATE DIELECTRIC; HETEROJUNCTION TRANSISTOR;

COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; MATHEMATICAL MODELS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33746215290     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2209724     Document Type: Article

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