Asymmetric tunnel barrier in a Si single-electron transistor

Microelectronic Engineering

Volumn 47, Issue 1, 1999, Pages 197-199

  Fujiwara, A ^a   Takahashi, Y ^a   Murase, K ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON TUNNELING; OXIDATION; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

PATTERN DEPENDENT OXIDATION; SINGLE ELECTRON TRANSISTOR; SOURCE DRAIN VOLTAGE; TUNNEL BARRIER;

TRANSISTORS;

EID: 0032594655     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00195-1     Document Type: Article

References (4)

1. Y. Takahashi et al, IEEE Trans. Electron Devices 43, 1213 (1996).
2. A. N. Korotkov and Y. V. Nazarov, Physica B 173, 217 (1991).
3. Y. Matsumoto, T. Hanajiri, T. Toyabe, and T. Sugano, Jpn. J. Appl. Phys. 35, 1126 (1996).
4. A. Fujiwara, Y. Takahashi, and K. Murase, Phys. Rev. Lett. 78, 1532 (1997).