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Volumn 100, Issue 3, 2006, Pages

Thermal evolution of hydrogen related defects in hydrogen implanted Czochralski silicon investigated by Raman spectroscopy and atomic force microscopy

(9) Dungen W a Job, R a Ma, Y a Huang, Y L a Mueller, T a Fahrner, W R a Keller, L O b Horstmann, J T b Fiedler, H b

a UNIVERSITY OF HAGEN (Germany)

b TU DORTMUND UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; HYDROGEN; HYDROGEN BONDS; MOLECULAR DYNAMICS; RAMAN SPECTROSCOPY; SILICON ON INSULATOR TECHNOLOGY; THERMOANALYSIS;

BLISTER FORMATION PROCESS; CZOCHRALSKI SILICON; HYDROGEN RELATED DEFECTS; THERMAL EVOLUTION;

SILICON;

EID: 33747455349 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2227262 Document Type: Article

Times cited : (15)

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