Corrigendum to "Nickel assisted metal induced crystallization of silicon: Effect of native silicon oxide layer" [Thin Solid Films 511-512 (2006) 275-279] (DOI:10.1016/j.tsf.2005.12.005);Nickel-assisted metal-induced crystallization of silicon: Effect of native silicon oxide layer

Thin Solid Films

Volumn 511-512, Issue , 2006, Pages 275-279

  Pereira, L ^a   Martins, R M S ^b   Schell, N ^b   Fortunato, E ^a   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Nickel assisted crystallization; Polycrystalline silicon; Spectroscopic ellipsometry

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CRYSTALLIZATION; DEPOSITION; SILICA; X RAY DIFFRACTION;

CRYSTALLINE FRACTION; NICKEL ASSISTED CRYSTALLIZATION; SILICON OXIDE LAYER; SPECTROSCOPIC ELLIPSOMETRY;

THIN FILMS;

EID: 33747381628     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.001     Document Type: Erratum

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