Polycrystalline silicon obtained by gold metal induced crystallization

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 178-182

  Pereira, L ^a   Aguas H ^a   Martins, R M ^a   Fortunato, E ^a   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRON BEAMS; ELLIPSOMETRY; EVAPORATION; EXCIMER LASERS; METALLIC FILMS; X RAY DIFFRACTION ANALYSIS;

EXCIMER LASER ANNEALING (ELA); METAL INDUCED CRYSTALLIZATION (MIC); SOLID PHASE CRYSTALLIZATION (SPC); SPECTROSCOPIC ELLIPSOMETRY (SE);

POLYSILICON;

EID: 2942527310     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.048     Document Type: Conference Paper

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