Low temperature solid phase crystallization of amorphous silicon using (Au + Ni) solution

Solid State Communications

Volumn 106, Issue 6, 1998, Pages 325-328

  Yoon, Soo Young ^a,b   Oh, Jae Young ^a   Kim, Chae Ok ^a,b   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; AMORPHOUS SILICON; ANNEALING; CRYSTALLIZATION; GOLD; INTERFACIAL ENERGY; LATTICE CONSTANTS; LOW TEMPERATURE EFFECTS; NICKEL; PHASE TRANSITIONS; TEMPERATURE;

LATTICE MISMATCH; METAL INDUCED CRYSTALLIZATION; SOLID PHASE CRYSTALLIZATION;

SEMICONDUCTING SILICON;

EID: 0032066509     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00064-7     Document Type: Article

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