10 Gbit/s modulation of 1.3 μm GaInNAs lasers up to 110°C

Electronics Letters

Volumn 42, Issue 16, 2006, Pages 925-926

  Gustavsson, J S ^a   Wei, Y Q ^a   Sadeghi, M ^a   Wang, S M ^a   Larsson, A ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; FREQUENCY MODULATION; LASERS; MODULATION; SENSITIVITY ANALYSIS; THERMAL EFFECTS; WAVEGUIDES;

10 GBIT/S MODULATION; CONSTANT MODULATION VOLTAGE; GAINNAS LASERS; RIDGE WAVEGUIDE;

GALLIUM COMPOUNDS;

EID: 33746862588     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20061517     Document Type: Article

References (9)

1. Paoletti, R., Agretsi, M., Bertone, D., Bianco, L., Bruschi, C., Buccieri, A., Campi, R., Dorigoni, C., Gotta, P., Liotti, M., Magnetti, G., Montangero, P., Morello, G., Rigo, C., Riva, E., Rossi, G., Soderstrom, D., Stano, A., Valenti, P., Vallone, M., and Meliga, M.: ' High reliability and high yield 1300nm InGaAlAs directly modulated ridge waveguide Fabry-Perot lasers, operating at 10Gb/s, up to 110°C, with constant current swing ', J. Lightwave Technol., 2006, 24, p. 143-149 10.1109/JLT.2005.861128 0733-8724
2. Kondow, M., Kitatani, T., Nakatsuka, S., Larson, M.C., Nakahara, K., Yazawa, Y., Okai, M., and Uomi, K.: ' GaInNAs: a novel material for long wavelength semiconductor lasers ', IEEE J. Sel. Top. Quantum Electron., 1997, 3, p. 719-730 10.1109/2944.640627 1077-260X
3. Wei, Y.Q., Gustavsson, J.S., Sadeghi, M., Wang, S.M., Larsson, A., Savolainen, P., Melanen, P., and Sipilä, P.: ' Uncooled 2.5Gb/s operation of 1.3m GaInNAs DQW lasers over a wide temperature range ', Opt. Express, 2006, 14, p. 2753-2759 1094-4087
4. Dagens, B., Martinez, A., Make, D., Le Gouezigou, O., Provost, J.-G., Sallet, V., Merghem, K., Harmand, J.-C., Ramdane, A., and Thedrez, B.: ' Floor free 10Gb/s transmission with directly modulated GaInNAs-GaAs 1.35m laser for metropolitan applications ', IEEE Photonics Technol. Lett., 2005, 17, p. 971-973 10.1109/LPT.2005.845718 1041-1135
5. Wei, Y.Q., Sadeghi, M., Wang, S.M., Modh, P., and Larsson, A.: ' High performance 1.28m GaInNAs double quantum well lasers ', Electron. Lett., 2005, 41, p. 1328-1329 10.1049/el:20053210 0013-5194
6. Wang, S.M., Wei, Y.Q., Wang, X.D., Zhao, Q.X., Sadeghi, M., and Larsson, A.: ' Very low threshold current density 1.3m GaInNAs single quantum well lasers grown by molecular beam epitaxy ', J. Cryst. Growth, 2005, 278, p. 734-738 10.1016/j.jcrysgro.2004.12.150 0022-0248
7. Tansu, N., and Mawst, L.J.: ' The role of hole-leakage in 1300-nm InGaAsN quantum well lasers ', Appl. Phys. Lett., 2003, 82, p. 1500-1502 10.1063/1.1558218 0003-6951
8. Fehse, R., Tomic, S., Adams, A.R., Sweeney, S.J., O'Reilly, E.P., Andreev, A., and Riechert, H.: ' A quantitative study of radiative, Auger, and defect related recombination processes in 1.3m GaInNAs-based quantum well lasers ', IEEE J. Sel. Top. Quantum Electron., 2002, 8, p. 801-810 10.1109/JSTQE.2002.801684 1077-260X
9. Wei, Y.Q., Gustavsson, J.S., Haglund, Å., Modh, P., Sadeghi, M., Wang, S.M., and Larsson, A.: ' High frequency modulation and bandwidth limitations of GaInNAs double quantum well lasers ', Appl. Phys. Lett., 2006, 88, p. 051103 0003-6951