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Volumn 17, Issue 5, 2005, Pages 971-973

Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-μm laser for metropolitan applications

Author keywords

Characteristic temperature To; GaInNAs; Metropolitan area networks; Optical communication; Semiconductor lasers

Indexed keywords

BIT ERROR RATE; CONTINUOUS WAVE LASERS; FIBER OPTICS; LIGHT EMISSION; LIGHT MODULATION; LIGHT TRANSMISSION; METROPOLITAN AREA NETWORKS; OPTICAL COMMUNICATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 21044457789     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.845718     Document Type: Article
Times cited : (22)

References (9)
  • 2
    • 0035653984 scopus 로고    scopus 로고
    • "A theoretical analysis of the radiative current and its dependence on pressure in GaInNAs 1.3 μm lasers"
    • Paper TuY2
    • S. Tomic, E. P. O'Reilly, A. R. Adams, and R. Fehse, "A theoretical analysis of the radiative current and its dependence on pressure in GaInNAs 1.3 μm lasers," in 14th Ann. Meeting IEEE Lasers and Electro-Optics Society, vol. 1, 2001, Paper TuY2, pp. 328-329.
    • (2001) 14th Ann. Meeting IEEE Lasers and Electro-Optics Society , vol.1 , pp. 328-329
    • Tomic, S.1    O'Reilly, E.P.2    Adams, A.R.3    Fehse, R.4
  • 3
    • 0344897171 scopus 로고    scopus 로고
    • "Intrinsic temperature sensitivities of 1.3 μm GaINAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers"
    • Paper MD3
    • S. J. Sweeney, R. Fehse, A. R. Adams, and H. Riechert, "Intrinsic temperature sensitivities of 1.3 μm GaINAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers," in 16th Ann. Meeting IEEE Lasers and Electro-Optics Society, vol. 1, 2003, Paper MD3, pp. 39-40.
    • (2003) 16th Ann. Meeting IEEE Lasers and Electro-Optics Society , vol.1 , pp. 39-40
    • Sweeney, S.J.1    Fehse, R.2    Adams, A.R.3    Riechert, H.4
  • 4
    • 0033686985 scopus 로고    scopus 로고
    • "7.8 GHz small-signal modulation bandwidth of 1.3 μm DQW GaInAsN /gaAs laser diodes"
    • Jun
    • M. Reinhardt, M. Fischer, M. Kamp, and A. Forchel, "7.8 GHz small-signal modulation bandwidth of 1.3 μm DQW GaInAsN/gaAs laser diodes," Electron. Lett., vol. 36, no. 12, pp. 1025-1026, Jun. 2000.
    • (2000) Electron. Lett. , vol.36 , Issue.12 , pp. 1025-1026
    • Reinhardt, M.1    Fischer, M.2    Kamp, M.3    Forchel, A.4
  • 5
    • 0034205636 scopus 로고    scopus 로고
    • "Static and dynamic characteristics of 1.29 μm GaInNAs ridge-waveguide laser diodes"
    • Jun
    • B. Borchert, A. Y. Egorov, S. Illek, and H. Riechert, "Static and dynamic characteristics of 1.29 μm GaInNAs ridge-waveguide laser diodes," IEEE Photon. Technol. Lett., vol. 12, no. 6, pp. 597-599, Jun. 2000.
    • (2000) IEEE Photon. Technol. Lett. , vol.12 , Issue.6 , pp. 597-599
    • Borchert, B.1    Egorov, A.Y.2    Illek, S.3    Riechert, H.4
  • 7
    • 4944234142 scopus 로고    scopus 로고
    • "1.3 μm double quantum well-GaInNAs distributed feedback laser diode with 13.8 GHz small signal modulation bandwidth"
    • Sep
    • D. Gollub, S. Moses, and A. Forchel, "1.3 μm double quantum well-GaInNAs distributed feedback laser diode with 13.8 GHz small signal modulation bandwidth," Electron. Lett., vol. 40, no. 19, pp. 1181-1182, Sep. 2004.
    • (2004) Electron. Lett. , vol.40 , Issue.19 , pp. 1181-1182
    • Gollub, D.1    Moses, S.2    Forchel, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.