Hg1-xCdxI2/CdTe-based heterostructures as a new high Z material for radiation detectors: VPE growth of micro-pixel arrays

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 563, Issue 1, 2006, Pages 9-12

  Sochinskii, N V ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

Cadmium telluride; CdTe based heterostructures; Hg1 xCdxI2; Semiconductor compounds; Vapor growth

Indexed keywords

ENERGY GAP; GROWTH (MATERIALS); MERCURY COMPOUNDS; RADIATION DETECTORS; VAPOR PHASE EPITAXY;

CADMIUM TELLURIDE; CDTE-BASED HETEROSTRUCTURES; HGXCDXI2; SEMICONDUCTOR COMPOUNDS; VAPOR GROWTH;

HETEROJUNCTIONS;

EID: 33746851148     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.01.056     Document Type: Article

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