Proposal for BexZn1-xS barrier layers combined with ZnS wells

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 7, 2006, Pages 5821-5825

  Onodera, Chikara ^a   Shoji, Tadayoshi ^b   Hiratate, Yukio ^b   Taguchi, Tsunemasa ^c  

^a Electronic Engineering Course   (Japan)

^b TOHOKU INSTITUTE OF TECHNOLOGY   (Japan)

^c YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

Band offset; Effective band gap; Exciton binding energy; ZnS BexZn1 xS SQWs

Indexed keywords

BERYLLIUM; BINDING ENERGY; ENERGY GAP; EXCITONS; SEMICONDUCTOR QUANTUM WELLS;

BAND OFFSET; EFFECTIVE BAND GAP; EXCITON BINDING ENERGY;

ZINC SULFIDE;

EID: 33746785984     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.5821     Document Type: Article

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