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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 2 A, 2003, Pages 393-399

Excitonic properties in CdxZn1-xS/ZnS quantum wells

(4) Onodera, Chikara b Shoji, Tadayoshi c Hiratate, Yukio c Taguchi, Tsunemasa a

a YAMAGUCHI UNIVERSITY (Japan)

b Electronic Engineering Course (Japan)

c TOHOKU INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Band offset; CdxZn1 xS ZnS QW; Electric field; Exciton; Exciton binding energy; Magnetic field

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRONS; EXCITONS; MAGNETIC FIELDS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS;

BAND OFFSET; BUFFER LAYER; DIAMAGNETIC SHIFT; EFFECTIVE BAND GAP ENERGY; EXCITON BINDING ENERGY; EXCITONIC PROPERTIES; STRAIN EFFECT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0038005549 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.393 Document Type: Article

Times cited : (12)

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