Improvement of crystalline quality of BeZnSe using buffer layer by migration enhanced epitaxy on GaP(001) substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 1-7, 2005, Pages

  Yokoyama, Takeshi ^a   Niiyama, Yuuki ^a   Murata, Tomoyuki ^a   Watanabe, Masahiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Be chalcogenides; Buffer layer; GaP; Lattice match; Migration enhanced epitaxy; Ultraviolet emission

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM COMPOUNDS; IRRADIATION; MOLECULAR BEAM EPITAXY; SELENIUM; STACKING FAULTS; SUBSTRATES;

BE-CHALCOGENIDES; BUFFER LAYERS; GAP; LATTICE MATCH; MIGRATION ENHANCED EPITAXY (MEE); ULTRAVIOLET EMISSIONS;

BERYLLIUM COMPOUNDS;

EID: 17444370965     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L75     Document Type: Article

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