Epitaxial growth of BeZnSe on CaF2/Si(111) substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 8 A, 2002, Pages

  Maruyama, Takeo ^a   Nakamura, Naoto ^a   Watanabe, Masahiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Be chalcogenides; Molecular beam epitaxy; Si substrate; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; BERYLLIUM COMPOUNDS; CALCIUM COMPOUNDS; CRYSTAL LATTICES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING SILICON; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

ATOMIC BONDING;

SINGLE CRYSTALS;

EID: 0036694810     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l876     Document Type: Article

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