Thermal stress analysis for GaInAsP multiple quantum well wafer chemically bonded to Si (100)

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Zhao, Hong Quan ^a   Yu, Li Juan ^a   Huang, Yong Zhen ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DIFFRACTION; FINITE ELEMENT METHOD; INDIUM COMPOUNDS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS; THERMAL EXPANSION; THERMAL STRESS; X RAYS;

CROSS-SECTIONAL DISTRIBUTIONS; CRYSTALLINE ORIENTATION; GAINASP MULTIPLE QUANTUM WELL WAFERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33746782897     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2217104     Document Type: Article

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