Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes

Applied Physics Letters

Volumn 89, Issue 4, 2006, Pages

  Pavesi, M ^a   Manfredi, M ^a   Rossi, F ^b   Meneghini, M ^c   Zanoni, E ^c   Zehnder, U ^d   Strauss, U ^d  

^a UNIVERSITY OF PARMA   (Italy)

^b IMEM CNR   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

^d OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON TUNNELING; HETEROJUNCTIONS; QUANTUM THEORY; SEMICONDUCTING INDIUM COMPOUNDS;

CARRIER INJECTION; ELECTRICAL MEASUREMENTS; OPTICAL CHARACTERIZATION; QUANTUM HETEROSTRUCTURES;

LIGHT EMITTING DIODES;

EID: 33746614838     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2240309     Document Type: Article

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