Thermally induced formation of SiC nanoparticles from Si/C/Si multilayers deposited by ultra-high-vacuum ion beam sputtering

Nanotechnology

Volumn 17, Issue 13, 2006, Pages 3129-3133

  Chung, Chen Kuei ^a   Wu, Bo Hsiung ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HIGH TEMPERATURE OPERATIONS; INTERFACIAL ENERGY; ION BEAMS; MULTILAYERS; SILICON CARBIDE; SILICON WAFERS; SPUTTERING; STACKING FAULTS; ULTRAHIGH VACUUM;

NANOMETRE; SIC NANOPARTICLE; STACKING DEFECTS; SUBMICRON; ULTRA-HIGH-VACUUM ION BEAM SPUTTERING;

NANOSTRUCTURED MATERIALS;

EID: 33746582416     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/13/008     Document Type: Article

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