Slowdown in development of self-assembled lnAs/GaAs(001) dots near the critical thickness

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 1886-1890

  Hanada, Takashi ^a   Totsuka, Hirofumi ^a   Hong, Soon Ku ^b   Godo, Kenji ^c   Miyajima, Kensuke ^d   Goto, Takenari ^e   Yao, Takafumi ^e  

^a TOHOKU UNIVERSITY   (Japan)

^b Chungnam National University   (South Korea)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d OSAKA UNIVERSITY   (Japan)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; HIGH ENERGY ELECTRON DIFFRACTION; NUCLEATION; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

ENERGETICS; PHOTOLUMINESCENCE MEASUREMENTS; STRAIN RELAXATION MEASUREMENTS; THICKNESS-DEPENDENT BARRIER HEIGHT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33746522977     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2219756     Document Type: Article

References (12)

1. V. A. Shchukin and D. Bimberg, Rev. Mod. Phys. 71, 1125 (1999).
2. I. Daruka and A.-L. Barabási, Phys. Rev. Lett. 79, 3708 (1997).
3. J. Tersoff and F. K. LeGoues, Phys. Rev. Lett. 72, 3570 (1994).
4. L. G. Wang. P. Kratzer, M. Scheffler. and N. Moll, Phys. Rev. Lett. 82, 4042 (1999).
5. L. G. Wang, P. Kratzer, N. Moll, and M. Scheffler, Phys. Rev. B 62, 1897 (2000).
6. T. Hanada and T. Yao, Microelectron. J. 36, 216 (2005).
7. T. Hanada, H. Totsuka, and T. Yao, Jpn. J. Appl. Phys., Part 1 40, 1878 (2001).
8. D. Leonard, K. Pond, and P. M. Petroff, Phys. Rev. B 50, 11687 (1994).
9. N. P. Kobayashi, T. R. Ramachandran, P. Chen, and A. Madhukar, Appl. Phys. Lett. 68, 3299 (1996).
10. T. J. Krzyzewski, P. B. Joyce, G. R. Bell, and T. S. Jones, Phys. Rev. B 66, 201302 (2002).
11. W. Yang, H. Lee, T. J. Johnson, P. C. Sercel, and A. G. Norman, Phys. Rev. B 61, 2784 (2000).
12. A. V. Osipov, S. A. Kukushkin, F. Schmitt, and P. Hess, Phys. Rev. B 64, 205421 (2001).