Strain Relaxation of Self-Assembled InAs/GaAs(001) Quantum Dots Observed by Reflection High-Energy Electron Diffraction

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages 1878-1881

  Hanada, Takashi ^a   Totsuka, Hirofumi ^a   Yao, Takafumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

GaAs; InAs; Lattice mismatch; Molecular beam epitaxy; Quantum dot; RHEED; Strain relaxation

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRON BEAMS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035267634     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1878     Document Type: Article

References (9)

1. I. Daruka and A.-L. Barabási: Phys. Rev. Lett. 79 (1997) 3708.
2. N. Grandjean, J. Massies and V. H. Etgens: Phys. Rev. Lett. 69 (1992) 796.
3. F. H. Stillinger and T. A. Weber: Phys. Rev. B 31 (1985) 5262.
4. M. Ichimura: Phys. Status Solidi A 153 (1996) 431.
5. D. Leonard, K. Pond and P. M. Petroff: Phys. Rev. B 50 (1994) 11687.
6. N. Moll, M. Scheffler and E. Pehlke: Phys. Rev. B 58 (1998) 4566.
7. W. Yang, H. Lee, T. J. Johnson, P. C. Sercel and A. G. Norman: Phys. Rev. B 61 (2000) 2784.
8. P. A. Doyle and P. S. Turner: Acta Crystallogr. Sect. A 24 (1968) 390.
9. H. Saito, K. Nishi and S. Sugou: Appl. Phys. Lett. 74 (1999) 1224.