Imaging of Atomic Layer Deposited (ALD) tungsten monolayers on α-TiO2(110) by X-ray standing wave Fourier inversion

Journal of Physical Chemistry B

Volumn 110, Issue 25, 2006, Pages 12616-12620

  Kim, Chang Yong ^a,b   Elam, Jeffrey W ^c   Pellin, Michael J ^c   Goswami, Dipak K ^a   Christensen, Steven T ^a,b   Hersam, Mark C ^a,b   Stair, Peter C ^b,c   Bedzyk, Michael J ^a,b,c  

^a Northwestern University   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; LOW ENERGY ELECTRON DIFFRACTION; MONOLAYERS; SINGLE CRYSTALS; TITANIUM DIOXIDE; X RAY ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALD CONFORMAL LAYERS; ATOMIC LAYER DEPOSITED (ALD) TUNGSTEN MONOLAYERS; SUBSTRATE LATTICES; X-RAY STANDING WAVE (XSW) TECHNIQUE;

TUNGSTEN;

EID: 33746510196     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp061391s     Document Type: Article

References (50)

1. Wachs, I. E. Catal. Today 2005, 100, 79.
2. Kingon, A. I.; Maria, J. P.; Streiffer, S. K. Nature (London) 2000, 406-1032.
3. Shi, D. Functional thin films and functional materials: new concepts and technologies; Springer: Berlin, 2003.
4. Hagleitner, C.; Hierlemann, A.; Lange, D.; Kummer, A.; Kerness, N.; Brand, O.; Baltes, H. Nature (London) 2001, 414, 293.
5. Yen, W. K.; Chen, M. C.; Wang, P. J.; Liu, L. M.; Lin, M. S. Thin Solid Films 1995, 270, 462.
6. Hand, A. Semicond. Int. 2003, 26 (May), 46.
7. Elam, J. W.; Routkevitch, D.; Mardilovich, P. P.; George, S. M. Chem. Mater. 2003, 15, 3507.
8. Pellin, M. J.; Stair, P. C.; Xiong, G.; Elam, J. W.; Birrell, J.; Curtiss, L.; George, S. M.; Han, C. Y.; Iton, L.; Kung, H.; Kung, M.; Wang, H. H. Catal. Lett. 2005, 102, 127.
9. King, J. S.; Heineman, D.; Graugnard, E.; Summers, C. J. Appl. Surf. Sci. 2005, 244, 511.
10. Ihanus, J.; Hanninen, T.; Hatanpaa, T.; Aaltonen, T.; Mutikainen, I.; Sajavaara, T.; Keinonen, J.; Ritala, M.; Leskela, M. Chem. Mater. 2002, 14, 1937.
11. Houssa, M. High-K.gate dielectrics; Series in Materials Science and Engineering; Institute of Physics: Bristol, UK, 2003.
12. Elam, J. W.; Nelson, C. E.; Grubbs, R. K.; George, S. M. Surf. Sci. 2001, 479, 121.
13. Elam, J. W.; Nelson, C. E.; Grubbs, R. K.; George, S. M. Thin Solid Films 2001, 386, 41.
14. Klaus, J. W.; Ferro, S. J.; George, S. M. Thin Solid Films 2000, 360, 145.
15. Lakomaa, E. L. Appl. Surf. Sci. 1994, 75, 185.
16. Suntola, T.; Simpson, M. Atomic layer epitaxy; Blackie: Glasgow, 1990.
17. Sechrist, Z. A.; Fabreguette, F. H.; Heintz, O.; Phung, T. M.; Johnson, D. C.; George, S. M. Chem. Mater. 2005, 17, 3475.
18. Dulub, O.; Hebenstreit, W.; Diebold, U. Phys. Rev. Lett. 2000, 84, 3646.
19. Tauster, S. J.; Fung, S. C.; Garten, R. L. J. Am. Chem. Soc. 1978, 100, 170.
20. Batterman, B. W. Phys. Rev. Lett. 1969, 22, 703.
21. Cheng, L.; Fenter, P.; Bedzyk, M. J.; Sturchio, N. C. Phys. Rev. Lett. 2003, 90, 255503.
22. Golovchenko, J. A.; Patel, J. R.; Kaplan, D. R.; Cowan, P. L.; Bedzyk, M. J. Phys. Rev. Lett. 1982, 49, 560.
23. Zegenhagen, J. Surf. Sci. Rep. 1993, 18, 199.
24. Escuadro, A. A.; Goodner, D. M.; Okasinski, J. S.; Bedzyk, M. J. Phys. Rev. B 2004, 70, 235416.
25. Okasinski, J. S.; Kim, C.-Y.; Walko, D. A.; Bedzyk, M. J. Phys. Rev. B 2004, 69, 041401.
26. Zhang, Z.; Fenter, P.; Cheng, L.; Sturchio, N. C.; Bedzyk, M. J.; Machesky, M. L.; Wesolowski, D. J. Surf. Sci. 2004, 554, L95.
27. Zhang, Z.; Fenter, P.; Cheng, L.; Sturchio, N. C.; Bedzyk, M. J.; Predota, M.; Bandura, A.; Kubicki, J. D.; Lvov, S. N.; Cummings, P. T.; Chialvo, A. A.; Ridley, M. K.; Benezeth, P.; Anovitz, L.; Palmer, D. A.; Machesky, M. L.; Wesolowski, D. J. Langmuir 2004, 20, 4954.
28. Bedzyk, M. J.; Cheng, L. W. Rev. Mineral. Geochem. 2002, 49, 221.
29. Fenter, P.; Cheng, L.; Rihs, S.; Machesky, M.; Bedzyk, M. J.; Sturchio, N. C. J. Colloid Interface Sci. 2000, 225, 154.
30. Gupta, J.; Sudijono, J.; Hsia, L. C.; Singh, S.; Tat, T. W. 90 nm contact fill performance using ALD-W as nucleation layer; In proceedings of the Advanced Metallization Conference 2003 (AMC 2003); Warrendale, Materials Research Society.
31. Granqvist, C. G. Handbook of inorganic electrochromic materials; Elsevier: Amsterdam, 1995.
32. Soled, S. L.; Mcvicker, G. B.; Murrell, L. L.; Sherman, L. G.; Dispenziere, N. C.; Hsu, S. L.; Waldman, D. J. Catal. 1988, 111, 286.
33. Diebold, U. Appl. Phys. A 2003, 76, 681.
34. Kurtz, R. L.; Stock-Bauer, R.; Msdey, T. E.; Roman, E.; De Segovia, J. Surf. Sci. 1989, 218, 178.
35. Lindan, P. J. D.; Harrison, N. M.; Holender, J. M.; Gillan, M. J. Chem. Phys. Lett. 1996, 261, 246.
36. Lindan, P. J. D.; Harrison, N. M.; Gillan, M. J. Phys. Rev. Lett. 1998, 80, 762.
37. Epling, W. S.; Peden, C. H. F.; Henderson, M. A.; Diebold, U. Surf. Sci. 1998, 413, 333.
38. Elam, J. W.; Groner, M. D.; George, S. M. Rev. Sci. Instrum. 2002, 73, 2981.
39. Palmer, D. J.; Dickens, P. G. Acta Crystallogr., B 1979, 35, 2199.
40. Grant, F. A. Rev. Mod. Phys. 1959, 31, 646.
41. Simple geometric consideration based on W-O bond length and unperturbed underlying oxygen atoms gives higher bridge site than atop site when the W-O bond length exceeds 1.89 Å.
42. Chambers, S. A. Surf. Sci. Rep. 2000, 39, 105.
43. Surnev, S.; Ramsey, M. G.; Netzer, F. P. Prog. Surf. Sci. 2003, 73, 117.
44. Fiedor, J. N.; Proctor, A.; Houalla, M.; Hercules, D. M. Surf. Interface Anal. 1995, 23, 204.
45. Scofield, J. H. J. Electron Spectrosc. Relat. Phenorn. 1976, 8, 129.
46. Gopel, W.; Anderson, J. A.; Frankel, D.; Jaehnig, M.; Phillips, K.; Schafer, J. A.; Rocker, G. Surf. Sci. 1984, 139, 333.
47. Scholz, A.; Schnyder, B.; Wokaun, A. J. Mol. Catal., A 1999, 138, 249.
48. 6: nucleation layer for advanced semiconductor devices; In Proceedings of the Advanced Metallization Conference 2001 (AMC 2001); Warrendale, Materials Research Society.
49. Hilbrig, F.; Gobel, H. E.; Knozinger, H.; Schmelz, H.; Lengeler, B. J. Phys. Chem. 1991, 95, 6973.
50. Vuurman, M. A.; Wachs, I. E.; Hirt, A. M. J. Phys. Chem. 1991, 95, 9928.