Very high quality p-type AlxGa1-xN/GaN superlattice

Solid-State Electronics

Volumn 47, Issue 2, 2003, Pages 303-306

  Yasan, Alireza ^a   Razeghi, Manijeh ^a  

^a Northwestern University   (United States)

Author keywords

Admittance spectroscopy; AlGaN; GaN; Hall effect measurement; p type; Piezoelectric; Polarization; Superlattice

Indexed keywords

ACTIVATION ENERGY; GALLIUM NITRIDE; HALL EFFECT; OPTIMIZATION; PIEZOELECTRICITY; POLARIZATION; SUPERLATTICES;

ADMITTANCE SPECTROSCOPY;

ALUMINUM COMPOUNDS;

EID: 0037290301     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00211-3     Document Type: Conference Paper

References (4)

1. Razeghi M. III-nitride superlattice structure/the method of increasing acceptor level and decreasing contact resistance. US patent, 5831277, 19 March 1997, Started through private communications, 1995.
2. Schubert E.F., Grieshaber W., Goepfert I.D. Enhancement of deep acceptor activation in semiconductors by superlattice doping. Appl. Phys. Lett. 69(24):1996;3737-3739.
3. 0.8N/GaN superlattices. Appl. Phys. Lett. 74:1999;3681-3683.
4. Ambacher O., Smart J., Shealy J.R., Weimann N.G., Chu K., Murphy M.et al. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J. Appl. Phys. 85(6):1999;3222-3233.