1 / f noise in a dilute GaAs two-dimensional hole system in the insulating phase

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 34, Issue 1-2, 2006, Pages 252-255

  Deville, G ^a   Leturcq, R ^a,b   L'Hote D ^a   Tourbot, R ^a   Mellor, C J ^c   Henini, M ^c  

^a SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ   (France)

^b ETH ZURICH   (Switzerland)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

1 f noise; GaAs heterojunction; Percolation; Two dimensional hole systems

Indexed keywords

ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; LOW TEMPERATURE OPERATIONS; METAL INSULATOR TRANSITION; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS;

1 / F NOISE; GAAS HETEROJUNCTION; PERCOLATION; TWO-DIMENSIONAL HOLE SYSTEMS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33746458374     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.03.142     Document Type: Article

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