Linear temperature dependence of conductivity in the apparent insulating regime of dilute two-dimensional holes in GaAs

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 24, 2003, Pages

  Noh, Hwayong ^a   Lilly, M P ^b   Tsui, D C ^a   Simmons, J A ^b   Pfeiffer, L N ^c   West, K W ^c  

^a Princeton University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE;

ARTICLE; CONDUCTANCE; CORRELATION ANALYSIS; CRYSTALLIZATION; DENSITY; ELECTRIC POTENTIAL; ELECTRON; HEATING; MEASUREMENT; MOLECULAR INTERACTION; SEMICONDUCTOR; TECHNIQUE; TEMPERATURE DEPENDENCE; THEORY; TRANSPORT KINETICS;

EID: 1042299910     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.241308     Document Type: Article

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