Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs deposited

Journal of Crystal Growth

Volumn 293, Issue 2, 2006, Pages 263-268

  Alghoraibi, I ^a   Rohel, T ^a   Bertru, N ^a   Le Corre, A ^a   Letoublon A ^a   Caroff, P ^a   Dehaese, O ^a   Loualiche, S ^a  

^a INSA DE RENNES   (France)

Author keywords

A1. Atomic force microscopy; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting aluminum compounds; B2. Semiconducting indium compounds; B2. Semiconducting indium phosphide

Indexed keywords

MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

GROWTH CONDITIONS; QUANTUM DOT FORMATION; STRANSKY KRASTANOW METHOD; STRUCTURAL CHARACTERISTICS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33746443842     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.05.046     Document Type: Article

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