Growth and transformation of ultra-thin InAs/InP layers obtained by chemical beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1210-1216

  Lebouche Girard N ^a   Rudra, A ^a   Kapon, E ^a  

^a EPFL   (Switzerland)

Author keywords

Chemical beam epitaxy; InAs; InP; Quantum dots; Self organization

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL BEAM EPITAXY; COALESCENCE; CRYSTAL ORIENTATION; FILM GROWTH; MORPHOLOGY; NUCLEATION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; ULTRATHIN FILMS;

INDIUM ARSENIDE;

SEMICONDUCTING FILMS;

EID: 0031145705     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00955-4     Document Type: Article

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