Modeling techniques suitable for CAD-based design of internal matching networks of high-power RF/microwave transistors

IEEE Transactions on Microwave Theory and Techniques

Volumn 54, Issue 7, 2006, Pages 3052-3058

  Aaen, Peter H ^a,b   Plá, Jaime A ^a,b   Balanis, Constantine A ^a,c  

^a IEEE   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c Arizona State University   (United States)

Author keywords

Bonding wires; Computer aided design (CAD) techniques; High power RF transistors; MOS capacitors

Indexed keywords

BONDING WIRES; COMPUTER-AIDED DESIGN (CAD) TECHNIQUES; HIGH-POWER RF TRANSISTORS; INTERNAL MATCHING NETWORKS;

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTROMAGNETIC FIELD THEORY; MOS CAPACITORS; NETWORKS (CIRCUITS); TRANSISTORS;

MICROWAVE DEVICES;

EID: 33746388445     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2006.877033     Document Type: Article

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