Modeling high power RF LDMOS amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2004, Pages 1069-1072

  Goverdhanam, Kavita ^a   Lott, Joel ^a   Moinian, Shahriar ^a   Li, Ru ^a   Zell, Jeff ^a   Perelli, Steve ^a   Dai, Wenhua ^a   Frei, Michel ^a   Farrell, Don ^a   Bell, D Averill ^a   Lau, Ed ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3G AIR-INTERFACES; METAL-CERAMIC PACKAGE; PACKAGE-PARASITICS; RF LDMOS AMPLIFIERS;

CERAMIC MATERIALS; CODE DIVISION MULTIPLE ACCESS; COMMUNICATION SYSTEMS; COST EFFECTIVENESS; DIELECTRIC MATERIALS; ELECTRONICS PACKAGING; INDUCTANCE; MATHEMATICAL MODELS; SILICON;

MOS DEVICES;

EID: 4444328941     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. A. Wood, W. Brakensiek, C. Dragon, W. Burger, "120 Watt, 2GHz, Si LDMOS RF Power Transistor For PCS Base Station Applications", IEEE MTT-S Digest, 1998.
2. J. Jang, O. Tornbald, T. Arnborg, Q. Chen, K. Banerjee, Z. Yu, R. Dutton, "RF LDMOS Characterization and it's compact Modeling", IEEE MTT-S Digest, 2001.
3. T. Liang, J. Pla, P. Aaen, M. Mahalingam, "Equivalent-Circuit Modeling and Verification of Metal-Ceramic Packages for RF and Microwave Power Transistors", IEEE Trans on Microwave Theory and Tech., Vol 47, No. 6, June 1999.