On the development of CAD techniques suitable for the design of high-power RF transistors

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 10, 2005, Pages 3067-3074

  Aaen, Peter H ^a,b   Plá, Jaime A ^a,b   Balanis, Constantine A ^a,c  

^a IEEE

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c Arizona State University   (United States)

Author keywords

Bonding wires; Computer aided design (CAD) techniques; High power RF transistors; MOS capacitors

Indexed keywords

BONDING WIRES; HIGH-POWER RF TRANSISTORS; S-PARAMETER TEST FIXTURE;

COMPUTER SIMULATION; INDUCTANCE; MICROWAVES; MOS CAPACITORS; TRANSISTORS;

COMPUTER AIDED DESIGN;

EID: 27644500373     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2005.855129     Document Type: Article

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