Electrical and optical studies of Si-implanted GaN

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 407-412

  Fellows, James A ^a   Yeo, Yung Kee ^a   Hengehold, Robert L ^a   Krasnobaev, Leonid ^a  

^a AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; HALL EFFECT; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; TEMPERATURE;

ION DOSE; SILICON IONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036377103     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)