Diffusion and activation of Si implanted into GaAs

Vacuum

Volumn 70, Issue 2-3, 2003, Pages 97-101

  Jakieła, Rafał ^a,b   Barcz, Adam ^a,b  

^a INSTITUTE OF PHYSICS   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

CV; Diffusion; GaAs; Implantation; Si; SIMS

Indexed keywords

ANNEALING; DIFFUSION; DOPING (ADDITIVES); ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRICAL ACTIVATION;

SILICON;

EID: 12244310199     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00626-7     Document Type: Conference Paper

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