Characterization of In0.5Ga0.5As quantum dot infrared photodetector (QDIP) structures treated with post-growth processes

Current Applied Physics

Volumn 6, Issue SUPPL. 1, 2006, Pages

  Lim, J Y ^a,b   Nam, H D ^a,b   Song, J D ^a   Choi, W J ^a   Lee, J I ^a   Yang, H S ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Chung Ang University   (South Korea)

Author keywords

Dot in an asymmetric well structure; Infrared photodetector; Quantum dot

Indexed keywords

GALLIUM COMPOUNDS; HEAT TREATMENT; PHOTOCURRENTS; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTOR QUANTUM DOTS; SPECTRUM ANALYSIS;

CAPPING LAYER; DOT IN AN ASYMMETRIC WELL STRUCTURE; INFRARED PHOTODETECTOR; PHOTOCURRENT SPECTRUM;

INFRARED DETECTORS;

EID: 33746257272     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2006.01.007     Document Type: Article

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