Minority carrier lifetimes in HgCdTe alloys

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1369-1378

  Krishnamurthy, S ^a   Berding, M A ^a   Yu, Z G ^a  

^a SRI INTERNATIONAL   (United States)

Author keywords

Auger; Fermi Dirac statistics; HgCdTe; Minority carrier lifetimes; Radiative; Shockley Read Hall; Trap states

Indexed keywords

AUGER; FERMI-DIRAC STATISTICS; HGCDTE; MINORITY CARRIER LIFETIMES; RADIATIVE; SHOCKLEY-READ-HALL; TRAP STATES;

ABSORPTION; ANISOTROPY; CADMIUM; CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; FERMI LEVEL; MERCURY (METAL); PARAMETER ESTIMATION; PHOTONS; TELLURIUM; THERMAL EFFECTS;

INTERMETALLICS;

EID: 33746255423     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0270-2     Document Type: Conference Paper

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