Full band structure calculation of minority carrier lifetimes in HgCdTe and thallium-based alloys

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 694-697

  Krishnamurthy, Srinivasan ^a   Chen, A B ^b   Sher, A ^a  

^a SRI INTERNATIONAL   (United States)

^b AUBURN UNIVERSITY   (United States)

Author keywords

Auger rate; Band structure; HgCdTe; Minority carrier lifetime; Thallium alloys

Indexed keywords

EID: 0342752840     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0038-y     Document Type: Article

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