Extraction of critical dimension reference feature CDs from new test structure using HRTEM imaging

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2005, Pages 5-10

  Allen, Richard A ^a   Hunt, Amy ^b   Murabito, Christine E ^a   Park, Brandon ^a   Guthrie, William F ^a   Cresswell, Michael W ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Accurel Systems International Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL DIMENSION (CD); REFERENCE MATERIALS; TEST STRUCTURE;

CRYSTAL ORIENTATION; PROJECT MANAGEMENT; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR MATERIALS;

EID: 24644459182     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Mohr, P.J. and Taylor, B.N., "The 2002 CODATA Recommended Values of the Fundamental Physical Constants, Web Version 4.0," available at physics.nist.gov/constants (National Institute of Standards and Technology, Gaithersburg, MD 20899, 9 December 2003).
2. Cresswell, M.W., Bogardus, E.H., Martinez de Pinillos, J.V., Bennett, M.H., Allen, R.A., Guthrie, W.F., Murabito, C.E., Am Ende, B.A., and Linholm, L.W., "CD Reference Materials for Sub-Tenth Micrometer Applications," Proceedings SPIE Vol. 4689 Metrology, Inspection, and Process Control for Microlithography XIX, pp. 116-127 (2002).
3. International Technology Roadmap for Semiconductors, 2003 Edition, available at public.itrs.net/ (Semiconductor Industry Association, San Jose, California, 2003).
4. Cresswell, M.W., Sniegowski, J.J., Ghoshtagore, R.N., Allen, R.A., Guthrie, W.F., Gurnell, A.W., Linholm, L.W., Dixson, R.G., and Teague, E.C., "Recent Developments in Electrical Linewidth and Overlay Metrology for Integrated Circuit Fabrication Processes," Japan Journal of Applied Physics, Vol. 35, pp. 6597-6609 (1996).
5. Allen, R.A., Cresswell, M.W., Murabito, C.E., Dixson, R.G., and Bogardus, E.H., "Critical Dimension Calibration Standards for ULSI Metrology," CP683, Characterization and Metrology for ULSI Technology: 2003 Iinternational Conference, D.G. Seiler, et al., eds., American Institute of Physics, pp. 421-428 (2003).
6. Cresswell, M.W., Dixson, R.G., Guthrie, W.F., Allen, R.A., Murabito, C.E., Park, B., Martinez, J.V., and Hunt, A., "Critical Dimension Reference Features with Sub-Five Nanometer Uncertainty," Proceedings SPIE Vol. 5752 Metrology, Inspection, and Process Control for Microlithography XIX, to be published.
7. Park, B., Allen, R.A., Guthrie, W.F., Dixson, R.G., Murabito, C.E., and Cresswell, M.W., "Comparison of CD-Measurements Extracted from Test-Structure Features Having Linewidths in the Range 40 nm to 240 nm by Use of SEM and HRTEM Imaging," this conference.
8. Allen, R.A., am Ende, B.A., Cresswell, M.W., Murabito, C.E, Headley, T.J., Guthrie, W.F., Linholm, L.W., Ellenwood, C.H., and Bogardus, E.H., "Test Structures for Referencing Electrical Linewidth Measurements to Silicon Lattice Parameters Using HRTEM," IEEE Trans. Semiconductor Manufacturing, Vol. 16, No. 2, pp. 239-248 (May 2003).