Comparison of SEM and HRTEM CD measurements extracted from test-structures having feature linewidths from 40 nm to 240 nm

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2005, Pages 11-16

  Cresswell, Michael W ^a   Park, Brandon ^a   Allen, Richard A ^a   Guthrie, William F ^a   Dixson, Ronald G ^a   Tan, Wei Mira ^a   Murabito, Christine E ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; STATISTICAL METHODS; TRANSMISSION ELECTRON MICROSCOPY;

CRITICAL DIMENSION (CD); MONOCRYSTALLINE SILICON; TEST STRUCTURE;

MICROELECTRONICS;

EID: 27644467691     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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2. This paper was also published in Reviews of Modern Physics, vol 72, no, 2, pp. 351-495 (2000). The values of these constants are also available online at physics.nist.gov/constants.
3. R. G. Dixson, "CD-AFM Reference Metrology at NIST and International SEMATECH", to be published in SPIE Proceedings Vol. 5752 (2005).
4. R. A. Allen, T. J. Headley, S. C. Everist, R. N. Ghoshtagore, M. W. Cresswell, and L. W. Linholm, "High-Resolution Transmission Electron Microscopy Calibration of Critical Dimension (CD) Reference Materials," IEEE Transactions on Semiconductor Manufacturing, Vol. 14, No. 1, pp. 26-31, 2001.
5. R. A. Allen, A. Hunt, C. E. Murabito, B. Park, W. F. Guthrie, and M. W. Cresswell, "Extraction of Critical Dimension Reference Feature CDs from New Test Structure Using HRTEM Imaging," to be presented at IEEE International Conference on Microelectronic Test Structures, March 2005, Leuven, Belgium.
6. R. E. Walpole, R. H. Myers, S.L. Myers, K. Ye, K. Yee, 'Probability and Statistics for Engineers and Scientists (7m Edition)' # Prentice Hall; 7th edition (January, 2002) # ISBN: 0130415294.
7. NIST/SEMATECH e-Handbook of Statistical Methods, http://www.itl.nist.gov/ div898/handbook/, February, 2005.
8. M. Tortonese, Y. Guan, and J. Prochazka, "NIST-traceable calibration of CD-SEM magnification using a 100-nm pitch standard" Proc. SPIE - Volume 5038 Metrology, Inspection, and Process Control for Microlithography XVII, Daniel J. Herr, Editor, May 2003, pp. 711-718.
9. A. E. Vladar, M. T. Postek, R. Vane, "Active Monitoring and Control Of Electron-Beam-Induced Contamination," Proc. SPIE Vol. 4344, p. 835-843, Metrology, Inspection, and Process Control for Microlithography XV, Neal T. Sullivan, Ed., 08/2001
10. "Report of Investigation of RM 8111: Single-Crystal Critical Dimension Prototype Reference Materials," National Institute of Standards and Technology, Gaithersburg, Maryland March 2, 2005.