Measurement of the linewidth of electrical test-structure reference features by automated phase-contrast image analysis

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2002, Pages 1-6

  Am Ende, B A ^a   Cresswell, M W ^a   Allen, R A ^a   Headley, T J ^b   Guthrie, W F ^a   Linholm, L W ^a   Bogardus, E H ^c   Murabito, C E ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; FILMS; IMAGE ANALYSIS; LATTICE CONSTANTS; LITHOGRAPHY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

AUTOMATED PHASE CONTRAST IMAGE ANALYSIS; CRITICAL DIMENSION METROLOGY; ELECTRICAL TEST STRUCTURE; MONOCRYSTALLINE SILICON FILM;

ELECTRONIC EQUIPMENT TESTING;

EID: 0005023385     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Cresswell, M. W., Allen, R. A., "Electrical CD Metrology and Related Reference Materials," Handbook of Silicon Semiconductor Metrology, Edited Alain C. Diebold, Marcel Dekker, Inc., NY & Basel, 2001, p. 377.
2. Allen, R. A., Headley, T. J., Everist, S. C., Ghoshtagore, R. N., Cresswell, M. W., Linholn, L. W., "High-Resolution Transmission Electron Microscopy Calibration of Critical Dimension (CD) Reference Materials," IEEE Transactions on Semiconductor Manufacturing, Vol. 14, No. 1, February 2001, pp. 26-31.
3. Physical and Chemical Reference Data, Vol. 28, No. 6, 1999, pp. 1713-1852.