Initial growth of GaN and InN over GaAs (110) substrates

Brazilian Journal of Physics

Volumn 34, Issue 2 B, 2004, Pages 608-610

  De Paiva, A ^a   Alves, J L A ^a   Alves, H W Leite ^a  

^a FEDERAL UNIVERSITY OF SÃO JOÃO DEL REI   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4344570943     PISSN: 01039733     EISSN: None     Source Type: Journal    
DOI: 10.1590/s0103-97332004000400018     Document Type: Conference Paper

References (13)

1. S. C. Jain, M. Willander, J. Narayan, and R. van Overstraeten, J. Appl. Phys. 87, 965 (2000).
2. S. A. Ding, G. Neuhold, J. H. Weaver, P. Häberle, K. Horn, O. Brandt, H. Yang, and K. Ploog, J. Vac. Sci. Technol. A14, 819 (1996).
3. P. Hill, D. I. Westwood, L. Haworth, J. Lu, and J. E. Mac-Donald, J. Vac. Sci. Technol. B15, 1133 (1997).
4. D. Troost, H. -U. Baier, A. Berger, and W. Mönch, Surf. Sci. 242, 324 (1991).
5. X. Gonze, J.-M. Beuken, R. Caracas, F. Detraux, M. Fuchs, G.-M. Rignanese, L. Sindic, M. Verstraete, G. Zerah, F. Jollet, M. Torrent, A. Roy, M. Mikami, Ph. Ghosez, J.-Y. Raty, and D. C. Allan, Comput. Mater. Sci. 25, 478 (2002), and references therein.
6. C. Hartwigsen, S. Goedecker, and J. Hutter, Phys. Rev. B58, 3641 (1998).
7. H. J. Monkhorst and J. D. Pack, Phys. Rev. B13, 5188 (1976).
8. A. de Paiva, J. L. A. Alves, and H. W. Leite Alves, phys. stat. sol. (c)0, 417 (2002), and references therein.
9. H. Okumura, H. Hamaguchi, G. Feuillet, Y. Ishida, and S. Yoshida, Appl. Phys. Lett. 72, 3056 (1998).
10. H. W. Leite Alves, J. L. A. Alves, R. A. Nogueira, and J. R. Leite, Braz. J. Phys. 29, 817 (1999).
11. e = 0, in our case), AM is the difference of chemical potential of the constituents N, Ga or In, and X is the cation Ga or In. The restriction for Δμ is ΔH ≤ ΔH, where ΔH is the heat of formation of GaAs, 0.74 eV(W. G. Schmidt and F. Bechstedt, Phys. Rev. B54, 16742 (1996)) and, we have followed the recipe developed by J. E. Northrup, Phys. Rev. Lett. 62, 2487 (1989) and by H. W. Leite Alves, Braz. J. Phys. 27/A, 121 (1997).
12. e = 0, in our case), AM is the difference of chemical potential of the constituents N, Ga or In, and X is the cation Ga or In. The restriction for Δμ is ΔH ≤ ΔH, where ΔH is the heat of formation of GaAs, 0.74 eV(W. G. Schmidt and F. Bechstedt, Phys. Rev. B54, 16742 (1996)) and, we have followed the recipe developed by J. E. Northrup, Phys. Rev. Lett. 62, 2487 (1989) and by H. W. Leite Alves, Braz. J. Phys. 27/A, 121 (1997).
13. e = 0, in our case), AM is the difference of chemical potential of the constituents N, Ga or In, and X is the cation Ga or In. The restriction for Δμ is ΔH ≤ ΔH, where ΔH is the heat of formation of GaAs, 0.74 eV(W. G. Schmidt and F. Bechstedt, Phys. Rev. B54, 16742 (1996)) and, we have followed the recipe developed by J. E. Northrup, Phys. Rev. Lett. 62, 2487 (1989) and by H. W. Leite Alves, Braz. J. Phys. 27/A, 121 (1997).