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Volumn 36, Issue 11, 2005, Pages 1045-1048

Ab initio study of the nitridation of the GaAs (100) surfaces

Author keywords

Adsorption; III Nitrides; Nitridation; Surfaces; Total energy

Indexed keywords

ADSORPTION; ARSENIC; ION EXCHANGE; NEGATIVE IONS; NITROGEN; SURFACE TREATMENT;

III-NITRIDES; NITRIDATION; TOTAL ENERGY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 25144471597 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/j.mejo.2005.04.029 Document Type: Conference Paper

Times cited : (2)

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