Enhancement of free-carrier screening due to tunneling in coupled asymmetric GaN/AIGaN quantum discs

Applied Physics Letters

Volumn 89, Issue 2, 2006, Pages

  Lee, Kwan H ^a   Na, Jong H ^a   Taylor, Robert A ^a   Yi, Sam N ^a   Birner, Stefan ^b   Park, Young S ^c   Park, Chang M ^c   Kang, Tae W ^c  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c Dongguk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TUNNELING; GALLIUM NITRIDE; PHOTOLUMINESCENCE; PIEZOELECTRICITY;

CARRIER LIFETIME; ENERGY BLUESHIFTS; MICROPHOTOLUMINESCENCE; OPTICAL EXCITATION;

SEMICONDUCTOR DEVICES;

EID: 33746043767     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2220482     Document Type: Article

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