Quality assurance in an implantation laboratory by high accuracy RBS

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 249, Issue 1-2 SPEC. ISS., 2006, Pages 482-485

  Jeynes, C ^a   Peng, N ^a   Barradas, N P ^b   Gwilliam, R M ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

29.30.Ep; 68.35.Dv; 82.80.Yc; 85.40.Ry; Accurate Rutherford backscattering; Implantation; QA

Indexed keywords

ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; UNCERTAIN SYSTEMS; WSI CIRCUITS;

29.30.EP; 68.35.DV; 82.80.YC; 85.40.RY; ACCURATE RUTHERFORD BACKSCATTERING;

QUALITY ASSURANCE;

EID: 33745945284     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.03.171     Document Type: Article

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