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Volumn 37, Issue 9, 2006, Pages 963-975

High-temperature and self-heating effects in fully depleted SOI MOSFETs

Author keywords

MOSFET; SOI; TCAD

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; THERMAL EFFECTS; THRESHOLD VOLTAGE;

EID: 33745887199     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.01.006     Document Type: Article
Times cited : (48)

References (21)
  • 1
    • 84876716278 scopus 로고
    • Design consideration in high temperature analog CMOS integrated circuits
    • Shoucair F.S. Design consideration in high temperature analog CMOS integrated circuits. IEEE Trans. Components, Hybrids, Manuf. Technol. CHMT-9 3 (1986) 399-404
    • (1986) IEEE Trans. Components, Hybrids, Manuf. Technol. , vol.CHMT-9 , Issue.3 , pp. 399-404
    • Shoucair, F.S.1
  • 2
    • 85051932796 scopus 로고    scopus 로고
    • P. Francis, A. Terao, B. Gentinne, D. Flandre, J.P. Colinge, SOI technology for high temperature applications, IEDM Technical Digest, 1992, pp. 353-356.
  • 4
    • 0033902171 scopus 로고    scopus 로고
    • A physical thermal noise model for SOI MOSFET
    • Jin W., Chan P., and Lau J. A physical thermal noise model for SOI MOSFET. IEEE Trans. Electron Devices 47 4 (2000) 768-773
    • (2000) IEEE Trans. Electron Devices , vol.47 , Issue.4 , pp. 768-773
    • Jin, W.1    Chan, P.2    Lau, J.3
  • 5
    • 0035250063 scopus 로고    scopus 로고
    • Analytical modeling of the partially depleted SOI MOSFET
    • Hammad M., and Schroder D. Analytical modeling of the partially depleted SOI MOSFET. IEEE Trans. Electron Devices 48 2 (2001) 252-258
    • (2001) IEEE Trans. Electron Devices , vol.48 , Issue.2 , pp. 252-258
    • Hammad, M.1    Schroder, D.2
  • 6
    • 0041672298 scopus 로고    scopus 로고
    • Short-channel single-gate SOI MOSFET model
    • Suzuki K., and Pidin S. Short-channel single-gate SOI MOSFET model. IEEE Trans. Electron Devices 50 5 (2003) 1297-1305
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.5 , pp. 1297-1305
    • Suzuki, K.1    Pidin, S.2
  • 7
    • 0029185370 scopus 로고
    • Silicon-on-insulator for high temperature metal oxide semiconductor devices and circuits
    • Flandre D. Silicon-on-insulator for high temperature metal oxide semiconductor devices and circuits. Mater. Sci. Eng. B 29 (1995) 7-13
    • (1995) Mater. Sci. Eng. B , Issue.29 , pp. 7-13
    • Flandre, D.1
  • 8
    • 85051932796 scopus 로고    scopus 로고
    • P. Francis, A. Terao, B. Gentinne, D. Flandrem, J.P. Colinge, SOI technology for high temperature applications, IEDM Technical Digest, 1992, pp. 353-356.
  • 9
    • 0026219658 scopus 로고
    • A temperature dependent SOI MOSFET model for high-temperature application (27 °C-300 °C)
    • Jeon D.S., and Burk E. A temperature dependent SOI MOSFET model for high-temperature application (27 °C-300 °C). IEEE Trans. Electron Devices 38 9 (1991) 2101-2111
    • (1991) IEEE Trans. Electron Devices , vol.38 , Issue.9 , pp. 2101-2111
    • Jeon, D.S.1    Burk, E.2
  • 10
    • 33745883519 scopus 로고    scopus 로고
    • A. Osman, High temperature modeling of partially depleted SOI MOSFETs, M.S. Thesis, Washington State University, December 1994.
  • 11
    • 0029379301 scopus 로고    scopus 로고
    • A.A. Osman, M.A. Osman, N.S. Dogan, M.A. Imam, Zero temperature coefficient biasing point of partially depleted SOI MOSFETs, IEEE Trans. Electron Devices (1995) 1709-1711.
  • 13
    • 33745885623 scopus 로고    scopus 로고
    • T. Tan, A two-dimensional simulation-based study of high temperature effects in bulk and silicon-on-insulator (SOI) MOSFETs, M.S. Thesis, Michigan Technological University, January 2000.
  • 14
    • 33745899298 scopus 로고    scopus 로고
    • ATLAS Users Manual, SILVACO International.
  • 15
    • 0021295048 scopus 로고
    • Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures part II: experiment
    • Shoucair F.S., and Hwang W. Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures part II: experiment. Microelectron. Reliab. 24 3 (1984) 497-510
    • (1984) Microelectron. Reliab. , vol.24 , Issue.3 , pp. 497-510
    • Shoucair, F.S.1    Hwang, W.2
  • 19
    • 85010330152 scopus 로고    scopus 로고
    • A.A. Osman, M.A. Osman, Investigation of high temperature effects on MOSFET gate transconductance, Fourth International High Temperature Electronics Conference Proceedings, June 1998.
  • 21
    • 0032760793 scopus 로고    scopus 로고
    • Temperature-dependent Kink effect model for partially depleted SOI NMOS devices
    • Lim S.C., and Kuo J.B. Temperature-dependent Kink effect model for partially depleted SOI NMOS devices. IEEE Trans. Electron Devices 36 1 (1999) 254-259
    • (1999) IEEE Trans. Electron Devices , vol.36 , Issue.1 , pp. 254-259
    • Lim, S.C.1    Kuo, J.B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.