Zero-Temperature-Coefficient Biasing Point of Partially Depleted SOI MOSFET's

IEEE Transactions on Electron Devices

Volumn 42, Issue 9, 1995, Pages 1709-1711

  Imam, Mohamed A ^b   Osman, Mohamed A ^a   Dogan, Numan S ^a  

^a WASHINGTON STATE UNIVERSITY   (United States)

^b MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC FIELDS; GATES (TRANSISTOR); MATHEMATICAL MODELS; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; VOLTAGE CONTROL;

BIASING POINT; DRAIN CURRENT; DRAIN VOLTAGE; FRONT GATE BIAS; KINK EFFECT; LINEAR REGION; SATURATION REGION; THRESHOLD VOLTAGE; ZERO-TEMPERATURE-COEFFICIENT;

MOSFET DEVICES;

EID: 0029379301     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.405293     Document Type: Article

References (11)

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