Investigation of high temperature effects on MOSFET transconductance (gm)

1998 4th International High Temperature Electronics Conference, HITEC 1998

Volumn , Issue , 1998, Pages 301-304

  Osman, A A ^a   Osman, M A ^a  

^a Washington State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE EFFECTS; TEMPERATURE DISTRIBUTION; TRANSCONDUCTANCE;

CURRENT MODELING; DEVICE PARAMETERS; GATE BIAS; LINEAR REGION; MOS-FET; SATURATION REGION; TEMPERATURE DEPENDENCE; TRANSCONDUCTANCES (GM);

MOSFET DEVICES;

EID: 85010330152     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HITEC.1998.676808     Document Type: Conference Paper

References (12)

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