Characterization of novel electrode for high-density Pb(Zr, Ti)O 3 capacitor application

Integrated Ferroelectrics

Volumn 81, Issue 1, 2006, Pages 15-26

  Koo, June Mo ^a   Kim, Sukpil ^a   Shin, Sangmin ^a   Lee, Kwanghee ^a   Lee, Jangho ^a   Kim, Kihong ^a   Seo, Bum Seok ^a   Lee, Jung Hyun ^a   Park, Youngsoo ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

FRAM; IrTi alloy; MOCVD; PZT

Indexed keywords

CRYSTALLIZATION; ELECTRIC RESISTANCE; ELECTRODES; IRIDIUM COMPOUNDS; LEAD; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; REMANENCE; SURFACE ROUGHNESS;

FRAM; IRTI ALLOY; PZT; REMNANT POLARIZATION;

CAPACITORS;

EID: 33745857695     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580600657864     Document Type: Article

References (11)

1. A. K. Sharma, Semiconductor Memories. IEEE (New York, 1997), p. 387.
2. B. H.Park,B. S.Kang, S.D.Bu,T. W.Noh,J. Lee, and W.Jo, "Lanthanum-Substituted Bismuth Titanate for Use in Non-Volatile Memories," Nature 401, 682-684 (1999).
3. 9 Capacitors," Appl. Phys. Lett. 71, 2538-2540, (1997).
4. K. H. Noh, B. Yang, S. W. Lee, S. S. Lee, H. B. Kang, and Y. J. Park, "Issues and Reliability of High-Density FeRAMs," Jpn. J. Appl. Phys. 42, 2096-2099 (2003).
5. N. W. Jang, Y. J. Song, H. H. Kim, H. J. Joo, J. H. Park, H. Y. Kang, S. Y. Lee, and K. Kim, "Novel Common Cell Via and Etch Stopper Technology for 0.25 μm 1T1C 32 MBIT FRAM," Integrated Ferroelectrics 53, 299-305 (2003).
6. 3 Films on Trench Structure for High-Density Ferroelectric Random Access Memory," Integrated Ferroelectrics 66, 85-95 (2004).
7. Y. Xu, Ferroelectric Materials and Their Applications, North-Holland, 101 (1999).
8. H. N. Al-Shareef, Ferroelectric Thin Films: Synthesis and Basic Properties, ed. C. P. Araujo, J. F. Scott and G. W. Taylor (Gordon and Breach Publishers, 1996), p. 193.
9. T. B. Massalski, eds., Binary Alloy Phase Diagrams. Vol. 3 (2nd Ed.) ASM International, Ohio 2343-2344 (1992).
10. S. W. Jung, H. S. Kim, J. M. Koo, J. Y. Kim, and J. Kor, Surface Eng. 33, 149 (2000).
11. H. Fujisawa, K. Kita, M. Shimizu, and H. Niu, Jpn. J. Appl. Phys. 40, 5551 (2001).