Preparation of Pb(ZrxTi1-x)O3 films on trench structure for high-density ferroelectric random access memory

Integrated Ferroelectrics

Volumn 66, Issue , 2004, Pages 85-95

  Park, Youngsoo ^a   Lee, Jung Hyun ^a   Koo, June Mo ^a   Kim, Suk Pil ^a   Shin, Sangmin ^a   Cho, Choong Rae ^a   Lee, June Key ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Chonnam National University   (South Korea)

Author keywords

FeRAM; MOCVD; PZT; Thickness; Three dimensional structure; Trench

Indexed keywords

ASPECT RATIO; DEPOSITION; FERROELECTRIC DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RANDOM ACCESS STORAGE; THERMAL EFFECTS;

ATOMIC LAYER DEPOSITED (ALD); FERAM; THREE DIMENSIONAL STRUCTURE;

FERROELECTRIC THIN FILMS;

EID: 33745861513     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490894771     Document Type: Article

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