Issues and reliability of high-density FeRAMs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2096-2099

  Noh, Keum Hwan ^a   Yang, Beelyong ^b   Lee, Seok Won ^a   Lee, Seaung Suk ^a   Kang, Hee Bok ^a   Park, Young Jin ^a  

^a Hynix Semiconductor Inc   (South Korea)

^b Kumoh National Institute of Technology   (South Korea)

Author keywords

BLT; Design architecture; Ferroelectric; Memory; Reliability

Indexed keywords

BISMUTH COMPOUNDS; CAPACITORS; CMOS INTEGRATED CIRCUITS; CROSSTALK; FATIGUE OF MATERIALS; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; RELIABILITY;

EXTRA SENSING MARGIN; FERROELECTRIC CAPACITOR; FERROELECTRIC RANDOM ACCESS MEMORY; IMPRINT; RETENTION;

RANDOM ACCESS STORAGE;

EID: 0038686488     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2096     Document Type: Article

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