Status of 4H-SiC substrate and epitaxial materials for commercial power applications

Materials Research Society Symposium Proceedings

Volumn 815, Issue , 2004, Pages 3-14

  Powell, A R ^a   Sumakeris, J J ^a   Leonard, R T ^a   Brady, M F ^a   Müller, St G ^a   Tsvetkov, V F ^a   Hobgood, H McD ^a   Burk, A A ^a   Paisley, M J ^a   Glass, R C ^a   Carter Jr , C H ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GRAIN BOUNDARIES; HYDROGEN; OPTIMIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS; STACKING FAULTS; THERMAL CONDUCTIVITY;

DISLOCATION DENSITIES; EPITAXIAL MATERIALS; PHYSICAL VAPOR TRANSPORT (PVT); RADIATION RESISTANCE;

SILICON CARBIDE;

EID: 19944431423     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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