GaN quantum dots grown on non-polar a-plane SiC by plasma-assisted molecular beam epitaxy

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2341-2344

  Founta, S ^a   Rol, F ^a   Andreev, T ^a   Gayral, B ^a   Bellet Amalric, E ^a   Moisson, C ^b   Mariette, H ^a   Daudin, B ^a  

^a CEA GRENOBLE   (France)

^b SAVOIE TECHNOLAC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS;

CATHODOLUMINESCENCE; NON-POLAR HETEROSTRUCTURES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

GALLIUM NITRIDE;

EID: 27344445591     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461360     Document Type: Conference Paper

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