Resistive switching behavior of Cr-doped SrZrO 3 perovskite thin films for random access memory applications

Journal of the Korean Physical Society

Volumn 47, Issue SUPPL. 2, 2005, Pages

  Yang, Min Kyu ^a   Kim, Dal Young ^a   Park, Jae Wan ^a   Lee, Jeon Kook ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

Memory effects; SrZrO 3; Switching behavior

Indexed keywords

EID: 27444445063     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (12)

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