Dielectrophoretic assembly and characterization of individually suspended Ag, GaN, SnO2 and Ga2O3 nanowires

Nanotechnology

Volumn 17, Issue 14, 2006, Pages 3388-3393

  Seo, Hee Won ^a   Han, Chang Soo ^a   Hwang, Sun Oh ^b   Park, Jeunghee ^b  

^a Korea Institute of Machine and Materials   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRODES; GALLIUM NITRIDE; GATES (TRANSISTOR); ION BEAMS;

BOTTOM ELECTRODES; DIELECTROPHORETIC FORCE EQUATIONS; FOCUSED ION BEAMS;

NANOSTRUCTURED MATERIALS;

EID: 33745713713     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/14/008     Document Type: Article

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