Stable mode-locked operation up to 80 °C from an InGaAs quantum-dot laser

IEEE Photonics Technology Letters

Volumn 18, Issue 14, 2006, Pages 1500-1502

  Cataluna, M A ^a   Rafailov, E U ^b   McRobbie, A D ^a   Sibbett, W ^a   Livshits, D A ^c   Kovsh, A R ^c  

^a UNIVERSITY OF ST ANDREWS   (United Kingdom)

^b UNIVERSITY OF DUNDEE   (United Kingdom)

^c NL Nanosemiconductor GmbH   (Germany)

Author keywords

Broad temperature range; Mode locked lasers; Quantum dots (QDs)

Indexed keywords

LIGHT ABSORPTION; QUANTUM OPTICS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SIGNAL TO NOISE RATIO; TEMPERATURE MEASUREMENT;

BROAD TEMPERATURE RANGE; QUANTUM-DOT LASER; REVERSE BIAS;

LASER MODE LOCKING;

EID: 33745635353     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.877589     Document Type: Article

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